Programming Hall sensor

The sensor works on the principle of magnetically balanced Hall voltage detection. The magnetic flux generated by the primary current is in balance with the secondary voltage generated by the Hall voltage amplification, and the magnetic flux generated by the secondary coil is balanced, and the secondary voltage can accurately reflect the primary current.

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* Measures AC, DC and pulsed signals

* Excellent accuracy, good linearity

* Strong resistance to external interference, high common mode rejection ratio

* Low temperature drift, low power consumption, wide frequency band

* Perforated structure, no insertion loss

Application

* AC frequency conversion speed regulation

* Servo motor traction

* Uninterruptible power supply(UPS)

* Welding machine, battery power supply

Programming Hall sensor

Specification		10A/1V	25A/1V	50A/1V	Unit
IPN	Primary Rated Input Current	10	25	50	A
IP	Primary Current Measurement Range	0～20	0～50	0～100	A
VSN	Secondary rated output voltage	2.5±1			V
VC	The Power Supply Voltage	+5V(±5%)			V
IC	Current Consumption	＜20			mA
Vd	Insulation Voltage	Between primary and secondary circuits:3kV/50Hz/1min
εL	Linearity	＜0.1			%FS
X	Precision	T A=25℃:≤±0.5			%
V0	Offset Voltage	T A=25℃:≤±10			mV
VOM	Magnetic Offset Voltage	I P =0 after 3*IPN:≤±10			mV
VOT	Offset voltage temperature drift	I P =0 TA=-40～+80℃:≤±0.1			mV/℃
Tr	Response time	＜1			μS
f	Bandwidth(-1dB )	DC～200			kHz
TA	Working Temperature	-40～+80			℃
TS	Storage Temperature	-45～+85			℃

Specification		10A/1V	25A/1V	50A/1V	Unit
IPN	Primary Rated Input Current	10	25	50	A
IP	Primary Current Measurement Range	0～20	0～50	0～100	A
VSN	Secondary rated output voltage	2.5±1			V
VC	The Power Supply Voltage	+5V(±5%)			V
IC	Current Consumption	＜20			mA
Vd	Insulation Voltage	Between primary and secondary circuits:3kV/50Hz/1min
εL	Linearity	＜0.1			%FS
X	Precision	T A=25℃:≤±0.5			%
V0	Offset Voltage	T A=25℃:≤±10			mV
VOM	Magnetic Offset Voltage	I P =0 after 3*IPN:≤±10			mV
VOT	Offset voltage temperature drift	I P =0 TA=-40～+80℃:≤±0.1			mV/℃
Tr	Response time	＜1			μS
f	Bandwidth(-1dB )	DC～200			kHz
TA	Working Temperature	-40～+80			℃
TS	Storage Temperature	-45～+85			℃

Programming Hall sensor

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